PART |
Description |
Maker |
UPD45128163G5-A75L-9JF UPD45128841G5-A75L-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank/ LVTTL 128M-bit Synchronous DRAM 4-bank, LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- |
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range) 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行,LVTTL水树(宽温度范围
|
Elpida Memory, Inc.
|
UPD45128163-A75L |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory, Inc.
|
UPD45128163-I-E UPD45128163G5-A75I-9JF-E UPD451281 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
Elpida Memory
|
UPD45128163G5-A80T-9JF UPD45128163G5-A10T-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
M2V28S20ATP-6L M2V28S30ATP-6L M2V28S40ATP-6L M2V28 |
128M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V28S40ATP-8L M2V28S20ATP M2V28S20ATP-6 M2V28S20A |
128M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20A |
128M Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Semiconductor
|
MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT 128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
|
http:// NEC[NEC] NEC Corp. Performance Semiconductor, Corp.
|
P2S28D30CTP P2S28D40CTP |
(P2S28D30CTP / P2S28D40CTP) 128M Double Data Rate Synchronous DRAM
|
MIRA
|
MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
M12L2561616A-7TG |
4M x 16 Bit x 4 Banks Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|